抄録
Mechanisms of enhancement of plastic deformation in TiAl responsible for ductility improvement of this material, have been studied by high-voltage electron microscopy (HVEM) and atom probe field ion microscopy (AP-FIM). During cross-twinning, a dislocation interaction occurs at twin boundaries. Dislocation networks and fine Ti3Al particles on the pre-existing twin boundaries promote the formation and movement of twinning partial dislocations, contributing to an improvement of ductility.
本文言語 | 英語 |
---|---|
ページ(範囲) | 86-91 |
ページ数 | 6 |
ジャーナル | Ultramicroscopy |
巻 | 39 |
号 | 1-4 |
DOI | |
出版ステータス | 出版済み - 11月 2 1991 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 電子材料、光学材料、および磁性材料
- 原子分子物理学および光学
- 器械工学