Direct-coupled distributed baseband amplifier IC's for 40-Gb/s optical communication

Shunji Kimura, Yuhki Imai, Yutaka Miyamoto

研究成果: ジャーナルへの寄稿学術誌査読

11 被引用数 (Scopus)

抄録

We have developed GaAs MESFET baseband amplifiers using novel distributed amplification schemes. The key feature of their design is a direct coupling architecture employing two kinds of new distributed dc transformers. One is a distributed level-shift circuit and the other is a distributed source coupled FET logic (SCFL) level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a 0-to-30-GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier IC's. A distributed baseband amplifier IC with the distributed SCFL level transformer connected by another distributed level-shift circuit also has a 0-to-30-GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broad-band characteristics.

本文言語英語
ページ(範囲)1374-1379
ページ数6
ジャーナルIEEE Journal of Solid-State Circuits
31
10
DOI
出版ステータス出版済み - 10月 1996
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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