Diffusion equation-based study of thin film semiconductor gas sensor-response transient

Naoki Matsunaga, Go Sakai, Kengo Shimanoe, Noboru Yamazoe

研究成果: ジャーナルへの寄稿会議記事査読

96 被引用数 (Scopus)


A diffusion-reaction equation has been formulated and solved under non-steady condition in order to simulate how the gas concentration profile develops inside a thin film of semiconducting oxide after its exposure to a target gas. The gas concentration can be expressed by a polynomial function involving diffusion coefficient (D), rate constant (k), film thickness (L), depth from the film surface (x), time (t) and target gas concentration outside (Cs). Remarkably, the gas concentration at a given x exhibits overshooting behavior before reaching a steady value, the magnitude and appearance time of the overshooting being very dependent on x, k and L/D1/2. The overshooting appears as a result of the competition between diffusion and reaction. Two types of overshooting are recognized, which are ascribable to the gas molecules having entered from the surface and to those having reflected by the wall of substrate, respectively. Reflecting such an overshooting in gas concentration, the response transient also exhibits an overshooting phenomenon.

ジャーナルSensors and Actuators, B: Chemical
出版ステータス出版済み - 3月 15 2002
イベントSelected papers from Transduckers '01 Eurosensors XV (Transduckers 2001) - Munich, ドイツ
継続期間: 6月 10 20016月 14 2001

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 金属および合金
  • 電子工学および電気工学
  • 材料化学


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