Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback method

Noboru Shimizu; Dong Wang; Hiroshi Nakashima; Keisuke Yamamoto

doi:10.1149/2162-8777/ad384b

Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback method

Noboru Shimizu, Dong Wang, Hiroshi Nakashima, Keisuke Yamamoto

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

本文言語	英語
論文番号	044001
ジャーナル	ECS Journal of Solid State Science and Technology
巻	13
号	044001
DOI	https://doi.org/10.1149/2162-8777/ad384b
出版ステータス	出版済み - 2024

文献へのアクセス

10.1149/2162-8777/ad384b

引用スタイル

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title = "Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback method",

author = "Noboru Shimizu and Dong Wang and Hiroshi Nakashima and Keisuke Yamamoto",

year = "2024",

doi = "10.1149/2162-8777/ad384b",

language = "English",

volume = "13",

journal = "ECS Journal of Solid State Science and Technology",

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TY - JOUR

T1 - Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback method

AU - Shimizu, Noboru

AU - Wang, Dong

AU - Nakashima, Hiroshi

AU - Yamamoto, Keisuke

PY - 2024

Y1 - 2024

U2 - 10.1149/2162-8777/ad384b

DO - 10.1149/2162-8777/ad384b

M3 - Article

SN - 2162-8769

VL - 13

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 044001

M1 - 044001

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