We report densities and surface reaction probabilities of O and N atoms during sputter deposition of ZnInON films on ZnO templates, measured via vacuum ultraviolet absorption spectroscopy. O density is almost constant of 4.5 × 1011 cm-3 irrespective of O2 gas flow rate, whereas N density increases sharply from 2.7 × 1011 cm-3 for O2 gas sccm to 7.7 × 1011 cm-3 for 0.6 sccm and it increases gradually 1011 cm-3 for 5 sccm. The surface reaction probability βO of O atoms on ZnInON increases significantly from 0.022 to 0.404 with increasing O2 gas flow rate from 0 to 5 sccm, whereas βN of N atoms on ZnInON decreases slightly from 0.018 to 0.006. The stoichiometric chemical compositional ratio of ZnInON films with [Zn]/([Zn] + [In]) = [O]/([O] + [N]) = 94% is obtained at βO=0.404 of O atoms. This stoichiometric compositional ZnInON films grow coherently on ZnO templates, while nonstoichiometric films do not. The stoichiometric chemical composition is the key to coherent growth of ZnInON films.
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