@inproceedings{fac70cfc41c04afbb427fdfa6e932750,
title = "Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator",
abstract = "Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering followed by gate-opening using lift-off technique. Then thermal treatments were performed at different temperatures. Strain-relaxation was observed by Raman spectroscopy. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect-related PL signal increased with increasing annealing temperature. The energy position and profile of defect-related PL signal also varied with annealing temperature and SiN thickness.",
author = "Dong Wang and Keisuke Yamamoto and Hongye Gao and Haigui Yang and Hiroshi Nakashima",
year = "2011",
doi = "10.1149/1.3567723",
language = "English",
isbn = "9781607682356",
series = "ECS Transactions",
number = "1",
pages = "1117--1122",
booktitle = "China Semiconductor Technology International Conference 2011, CSTIC 2011",
edition = "1",
note = "10th China Semiconductor Technology International Conference 2011, CSTIC 2011 ; Conference date: 13-03-2011 Through 14-03-2011",
}