Crack tip dislocations in silicon characterized by high-voltage electron microscopy

K. Higashida, N. Narita, M. Tanaka, T. Morikawa, Y. Miura, R. Onodera

研究成果: ジャーナルへの寄稿学術誌査読

31 被引用数 (Scopus)


The nature of crack tip dislocations and their multiplication processes in silicon crystals have been examined by using high-voltage electron microscopy. Cracks were introduced by the Vickers indentation method at room temperature, and the specimen indented was annealed at high temperatures to induce dislocation generation around the crack tip under the presence of residual stress due to the indentation. In the specimens annealed, fine slip bands with the step heights of around 1 nm were formed along the (111) slip planes near the crack tip. The crack tip dislocations observed were characterized by matching their images to those simulated, and it was found that two different slip systems were activated even in the early stage of dislocation emission. With the increase in the number of crack tip dislocations, more complicated dislocation configurations such as dislocation tangles were formed around the crack tip, showing the beginning of multiplication of crack tip dislocations which causes effective crack tip shielding.

ジャーナルPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
出版ステータス出版済み - 11月 2002

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 材料科学一般
  • 凝縮系物理学
  • 物理学および天文学(その他)
  • 金属および合金


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