@article{feb536269e874d05bb1d35e8ca1088ae,
title = "Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal",
abstract = "Temperature dependent Hall effect measurements from 20 to 300 K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed.",
author = "Akira Nagaoka and Hideto Miyake and Tomoyasu Taniyama and Koichi Kakimoto and Kenji Yoshino",
note = "Funding Information: This work was partially supported by the Collaborative Research Project of the Materials and Structures Laboratory, Tokyo Institute of Technology, the Sasakawa Scientific Research Grant from The Japan Science Society and Asahi Glass Foundation. The first author is supported by JSPS Research Fellowships for Young Scientists.",
year = "2013",
month = sep,
day = "9",
doi = "10.1063/1.4821279",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}