Control of si solid phase nucleation by surface steps for high-performance thin-film transistors

Material Science

• Amorphous Material 33%
• Crystallization 16%
• Electron Mobility 16%
• Grain Growth 33%
• Liquid Films 16%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Nucleation 100%
• Surface 16%
• Thin-Film Transistor 33%
• Wet Etching 33%

Physics

• Crystallization 16%
• Electron Mobility 16%
• Performance 16%
• Solid Phase 66%
• Vacuum Evaporation 16%

Engineering

• Anisotropic 16%
• Nucleation Site 16%
• Performance 16%
• Si Substrate 33%
• Surfaces 16%
• Thermal Oxidation 16%
• Thickness 16%