TY - GEN
T1 - Control of magnetic transition of ZnO:Co grown by RF-sputter using post-Annealing
AU - Nurut, Agusutrisno Marlis
AU - Yamashita, Naoto
AU - Kamataki, Kunihiro
AU - Koga, Kazunori
AU - Itagaki, Naho
AU - Shiratani, Masaharu
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported by JICA, JSPS KAKENHI Grant Numbers JP21H01372, JP21K18731, JP22H05000, JP20H00142, JP22K14292, The Murata Science Foundation, and The Iketani Science and Technology Foundation.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Ferromagnetic semiconductor has attracted much attention for the application of spintronic devices, which will bring next generation of the information technology. Cobalt-doped Zinc Oxides (ZnO: Co) is strong candidate of this material group. The ZnO: Co films were grown on a silicon substrate (100) at room temperature by radio-frequency (rf) sputtering deposition and followed by post-Annealing treatment for 3 hours at 400°C and 800°C in the air. The transition from paramagnetic to ferromagnetic occurs after annealing at 400°C, and the properties return to paramagnetic like as-deposition when the temperature rises to 800°C. The XRD measurement of ZnO: Co films exhibited a wurtzite structure in the (002) plane and was free from secondary phases. Then, post-Annealing at 400°C due to shift peak and decrease oxygen element, meanwhile the crystallinity significantly up to 800°C.
AB - Ferromagnetic semiconductor has attracted much attention for the application of spintronic devices, which will bring next generation of the information technology. Cobalt-doped Zinc Oxides (ZnO: Co) is strong candidate of this material group. The ZnO: Co films were grown on a silicon substrate (100) at room temperature by radio-frequency (rf) sputtering deposition and followed by post-Annealing treatment for 3 hours at 400°C and 800°C in the air. The transition from paramagnetic to ferromagnetic occurs after annealing at 400°C, and the properties return to paramagnetic like as-deposition when the temperature rises to 800°C. The XRD measurement of ZnO: Co films exhibited a wurtzite structure in the (002) plane and was free from secondary phases. Then, post-Annealing at 400°C due to shift peak and decrease oxygen element, meanwhile the crystallinity significantly up to 800°C.
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U2 - 10.1109/ICIEE55596.2022.10010108
DO - 10.1109/ICIEE55596.2022.10010108
M3 - Conference contribution
AN - SCOPUS:85147419382
T3 - 2022 International Conference on Informatics Electrical and Electronics, ICIEE 2022 - Proceedings
BT - 2022 International Conference on Informatics Electrical and Electronics, ICIEE 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 International Conference on Informatics Electrical and Electronics, ICIEE 2022
Y2 - 5 October 2022 through 7 October 2022
ER -