Consideration of growth process of diamond thin films in ambient oxygen by pulsed laser ablation of graphite

Tsuyoshi Yoshitake, Takashi Nishiyama, Takeshi Hara, Kunihito Nagayama

    研究成果: ジャーナルへの寄稿会議記事査読

    11 被引用数 (Scopus)

    抄録

    Diamond thin films were grown on diamond (1 0 0) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using a graphite target. In the optimum oxygen pressure of 5 × 10 -2 Torr, the sp 2 bonding fractions can be etched away preferentially and the sp 3 bonding fractions remain predominantly on the substrate. At substrate temperatures lower than 400 °C, amorphous carbon generates. At higher than 400 °C, diamond crystallites begin to generate in the amorphous carbon. At the suitable substrate temperatures between 550 and 650 °C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. Based on the results, the growth process of diamond thin film by PLD is considered.

    本文言語英語
    ページ(範囲)352-356
    ページ数5
    ジャーナルApplied Surface Science
    197-198
    DOI
    出版ステータス出版済み - 2002
    イベントCola 2001 - Tsukuba, 日本
    継続期間: 10月 1 200110月 1 2001

    !!!All Science Journal Classification (ASJC) codes

    • 化学一般
    • 凝縮系物理学
    • 物理学および天文学一般
    • 表面および界面
    • 表面、皮膜および薄膜

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