TY - GEN
T1 - Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain
AU - Nakagawa, Gou
AU - Asano, Tanemasa
PY - 2007/6/12
Y1 - 2007/6/12
N2 - A novel method of locating Si thin-film grains by combining metal nano-imprint and excimer laser annealing (ELA) is demonstrated. Metal nano-imprint at the a-Si film surface is used for the purpose of creating Si crystal nuclei which act as the seed for the subsequent crystallization by using ELA. The annealing to form nuclei at imprinted sites was carried out at temperatures below 450°C. ELA using XeCl laser of the sample with capping SiOx film resulted in the formation of over 2.0 μ m-sized Si crystal grains at controlled position. Electron back-scattering pattern (EBSP) analysis showed that about 75% of the boundaries inside the location-controlled grains were the coincidence site lattice boundaries.
AB - A novel method of locating Si thin-film grains by combining metal nano-imprint and excimer laser annealing (ELA) is demonstrated. Metal nano-imprint at the a-Si film surface is used for the purpose of creating Si crystal nuclei which act as the seed for the subsequent crystallization by using ELA. The annealing to form nuclei at imprinted sites was carried out at temperatures below 450°C. ELA using XeCl laser of the sample with capping SiOx film resulted in the formation of over 2.0 μ m-sized Si crystal grains at controlled position. Electron back-scattering pattern (EBSP) analysis showed that about 75% of the boundaries inside the location-controlled grains were the coincidence site lattice boundaries.
UR - http://www.scopus.com/inward/record.url?scp=34249952020&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34249952020&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:34249952020
SN - 1558998667
SN - 9781558998667
T3 - Materials Research Society Symposium Proceedings
SP - 503
EP - 508
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
T2 - 2006 MRS Spring Meeting
Y2 - 18 April 2006 through 20 April 2006
ER -