@conference{cfe853227fa4489885103ff45761a7fe,
title = "Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy",
author = "W.-C. Wen and T. Sakaguchi and K. Yamamoto and D. Wang and H. Nakashima",
year = "2017",
month = sep,
day = "20",
doi = "10.7567/ssdm.2017.k-1-04",
language = "English",
pages = "505--506",
note = "2017 International Conference on Solid State Devices and Materials (SSDM2017) ; Conference date: 19-09-2017 Through 22-09-2017",
}