Characterization of ferroelectric property of c-axis and non-c-axis oriented epitaxially grown bismuth layer-structured ferroelectric thin films with different m-numbers prepared by MOCVD

Takayuki Watanabe, Tomohiro Sakai, Atsushi Saiki, Keisuke Saito, Toyohiko Chikyo, Hiroshi Funakubo

研究成果: ジャーナルへの寄稿学術誌査読

5 被引用数 (Scopus)

抄録

Epitaxial thin films of bismuth layer-structured ferroelectrics (BLSF) with different m-numbers, i.e., Bi2VO5.5 (BVO) (m=1), SrBi2Ta2O9 (SBT) (m=2), and Bi4Ti3O12 (BIT) (m=3), were grown by metalorganic chemical vapor deposition (MOCVD). (001)-oriented films were deposited on (100)SrTiO3. (114)-oriented BVO, (116)-oriented SBT, and (118)-oriented BIT films were deposited on (110)SrTiO3. Moreover, (102)-oriented BVO, (103)-oriented SBT, and (104)-oriented BIT films were deposited on (111)SrTiO3. On (100), (110), and (111)SrTiO3 substrates, c-axis of the deposited films was tilted about 0°, 45°, and 56°, respectively, against perpendicular to the surface of the substrates irrespective of m-number. This suggests the growth of crystallographic equivalent orientation. The distinctive surface morphology originated to the feature of the film orientation was observed. The dielectric constant and the leakage current of c-axis-oriented film was smaller than that of non-c-axis-oriented one, indicating smaller dielectric constant and leakage current along c-axis than a- or b-axes. A larger ferroelectric anisotropy was ascertained for SBT and BIT films. Furthermore, the evaluated spontaneous polarization along a- and c- axes of BIT from the data of the epitaxially grown BIT films well agreed with the reported one for the single crystal. This suggests the ferroelectric property was not strongly affected by the strain in the films.

本文言語英語
ページ(範囲)XX-XXI
ジャーナルMaterials Research Society Symposium - Proceedings
655
出版ステータス出版済み - 2001
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 材料科学一般
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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