Characteristics of a-Si thin-film transistors with an inorganic black matrix on the top

Yoshimine Kato, Yuki Miyoshi, Masakazu Atsumi, Yoshimasa Kaida, Steven L. Wright, Lauren F. Palmateer

研究成果: ジャーナルへの寄稿学術誌査読

4 被引用数 (Scopus)


The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic "quasi-black matrix," such as metal, semiconductor, and insulator, on the top were investigated for various black matrix (BM) resistivities. In the Id-Vg characteristics, for a BM sheet resistance of about ∼1 × 1012 Ω/□, a high off current and large Vth shift were observed due to the back-gating effects when the BM is charged up. According to the ac dynamic characteristics, there was almost no leakage due to the capacitive coupling between source and drain after 16.6 msec (one frame) when the BM sheet resistance was above ∼7× 1013Ω/□ It was found that hydrogenated amorphous silicon germanium (a-SiGe:H) film, which has enough optical density, with the sheet resistance above the order of 1014Ω/□ is a promising candidate for an inorganic BM on TFT array.

ジャーナルIEICE Transactions on Electronics
出版ステータス出版済み - 1月 1 1996

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学


「Characteristics of a-Si thin-film transistors with an inorganic black matrix on the top」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。