Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions

Syuhei Kurokawa, Toshiro Doi, Osamu Ohnishi, Tsutomu Yamazaki, Zhe Tan, Tao Yin

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

10 被引用数 (Scopus)


Semiconductor technology is the key point of the information society. However, as technology developing, the traditional semiconductor material such as silicon (Si) could not meet the demand of the society. Therefore, the next generation semiconductor material silicon carbide (SiC) is widely concerned. Compared to Si, SiC has some superior physical and chemical properties. On the other hand, it is difficult to polish SiC wafers due to the chemical, mechanical, and thermal stability. To achieve high-efficient CMP processing of SiC substrates, oxygen gas was introduced which might increase removal rates. MnO2 slurry was selected instead of silica slurry and strong oxidant KMnO4 was used to improve SiC-CMP process as an additive. In this paper, the effect of oxidant was inspected first. Meanwhile, we carried out the CMP experiment with the new type CMP machine to control the processing atmospheres including types of gases and gas pressures. As conclusions, oxygen and high atmospheric pressure can increase the removal rate in MnO2 slurry. KMnO4 additive has a great effect on increase of the removal rate. One of additional interesting results is that there seems to be the optimum mixture ratio of N2 and O2 gases to achieve a higher removal rate of SiC wafer.

ホスト出版物のタイトルEvolutions in Planarization
ホスト出版物のサブタイトルEquipment, Materials, Techniques and Applications
出版社Materials Research Society
出版ステータス出版済み - 2013
イベント2013 MRS Spring Meeting - San Francisco, CA, 米国
継続期間: 4月 1 20134月 5 2013


名前Materials Research Society Symposium Proceedings


その他2013 MRS Spring Meeting
CitySan Francisco, CA

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学


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