TY - JOUR
T1 - Carrier injection and transport characteristics of copper phthalocyanine thin films under low to extremely high current densities
AU - Matsushima, Toshinori
AU - Sasabe, Hiroyuki
AU - Adachi, Chihaya
PY - 2006
Y1 - 2006
N2 - We investigated current density-voltage (J-V) characteristics of copper phthalocyanine (CuPc) thin films depending on active device areas. We prepared CuPc thin-film devices with active areas smaller than S=625 μ m2 using a photolithography technique. The maximum breakdown current density (JMAX) and voltage (VMAX) of the devices markedly increased as the active area was decreased from S=625 to 7.9 μ m2. In the smallest device, with S=7.9 μ m2, we obtained not only an extremely high current density of JMAX =128 kA cm2 at VMAX =9.2 V, but also unique J-V characteristics, indicating that the carrier conduction process shifted from the Fowler-Nordheim tunneling injection mechanism to shallow-trap and trap-free space-charge-limited current mechanisms.
AB - We investigated current density-voltage (J-V) characteristics of copper phthalocyanine (CuPc) thin films depending on active device areas. We prepared CuPc thin-film devices with active areas smaller than S=625 μ m2 using a photolithography technique. The maximum breakdown current density (JMAX) and voltage (VMAX) of the devices markedly increased as the active area was decreased from S=625 to 7.9 μ m2. In the smallest device, with S=7.9 μ m2, we obtained not only an extremely high current density of JMAX =128 kA cm2 at VMAX =9.2 V, but also unique J-V characteristics, indicating that the carrier conduction process shifted from the Fowler-Nordheim tunneling injection mechanism to shallow-trap and trap-free space-charge-limited current mechanisms.
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U2 - 10.1063/1.2165197
DO - 10.1063/1.2165197
M3 - Article
AN - SCOPUS:31144433431
SN - 0003-6951
VL - 88
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 3
M1 - 033508
ER -