Carrier injection and transport characteristics of copper phthalocyanine thin films under low to extremely high current densities

研究成果: ジャーナルへの寄稿学術誌査読

42 被引用数 (Scopus)

抄録

We investigated current density-voltage (J-V) characteristics of copper phthalocyanine (CuPc) thin films depending on active device areas. We prepared CuPc thin-film devices with active areas smaller than S=625 μ m2 using a photolithography technique. The maximum breakdown current density (JMAX) and voltage (VMAX) of the devices markedly increased as the active area was decreased from S=625 to 7.9 μ m2. In the smallest device, with S=7.9 μ m2, we obtained not only an extremely high current density of JMAX =128 kA cm2 at VMAX =9.2 V, but also unique J-V characteristics, indicating that the carrier conduction process shifted from the Fowler-Nordheim tunneling injection mechanism to shallow-trap and trap-free space-charge-limited current mechanisms.

本文言語英語
論文番号033508
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
88
3
DOI
出版ステータス出版済み - 2006

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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