Carrier compensation in O+ implanted n-type GaAs

T. Asano; P. L.F. Hemment

doi:10.1016/0038-1101(80)90191-4

Carrier compensation in O⁺ implanted n-type GaAs

T. Asano
, P. L.F. Hemment

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

4 被引用数 (Scopus)

抄録

Results of electrical measurements on 1 MeV O⁺ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.

本文言語	英語
ページ（範囲）	1089-1090
ページ数	2
ジャーナル	Solid-State Electronics
巻	23
号	10
DOI	https://doi.org/10.1016/0038-1101(80)90191-4
出版ステータス	出版済み - 1980
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
凝縮系物理学
材料化学
電子工学および電気工学

文献へのアクセス

10.1016/0038-1101(80)90191-4

他のファイルとリンク

引用スタイル

@article{62552e0d070b49529c81ebc246295090,

title = "Carrier compensation in O+ implanted n-type GaAs",

abstract = "Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.",

author = "T. Asano and Hemment, \{P. L.F.\}",

year = "1980",

doi = "10.1016/0038-1101(80)90191-4",

language = "English",

volume = "23",

pages = "1089--1090",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "10",

}

TY - JOUR

T1 - Carrier compensation in O+ implanted n-type GaAs

AU - Asano, T.

AU - Hemment, P. L.F.

PY - 1980

Y1 - 1980

N2 - Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.

AB - Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.

UR - https://www.scopus.com/pages/publications/84983829325

UR - https://www.scopus.com/pages/publications/84983829325#tab=citedBy

U2 - 10.1016/0038-1101(80)90191-4

DO - 10.1016/0038-1101(80)90191-4

M3 - Article

AN - SCOPUS:84983829325

SN - 0038-1101

VL - 23

SP - 1089

EP - 1090

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -