Carbon annealed HPHT-hexagonal boron nitride: Exploring defect levels using 2D materials combined through van der Waals interface

Momoko Onodera, Miyako Isayama, Takashi Taniguchi, Kenji Watanabe, Satoru Masubuchi, Rai Moriya, Taishi Haga, Yoshitaka Fujimoto, Susumu Saito, Tomoki Machida

研究成果: ジャーナルへの寄稿学術誌査読

11 被引用数 (Scopus)

抄録

Hexagonal boron nitride (h-BN) is a layered material that is generating interest in various fields owing to its fascinating properties. We present a multi-stranded analysis of carbon defects in h-BN using intentionally carbon (C)-doped h-BN crystals. Carbon defects were introduced into h-BN crystals synthesized under high-pressure and high-temperature (HPHT) conditions by a process of carbon annealing. We employ an innovative approach to explore impurity states in our C-doped h-BN by assembling it into van der Waals heterostructures with other 2D materials. Attaching graphene as a probe material to determine the impurity states in the h-BN bandgap, we locate an acceptor state above the Dirac point of graphene on C-doped h-BN, which causes anomalous bending in the Landau fan diagram. Furthermore, we adopt tungsten disulfide (WS2) as another probe material and assess the influence of C-doped h-BN on the emission spectrum of the WS2 monolayers. Our work reveals the nature of the carbon impurities in h-BN and also uncovers their effects on adjacent 2D materials.

本文言語英語
ページ(範囲)785-791
ページ数7
ジャーナルCarbon
167
DOI
出版ステータス出版済み - 10月 15 2020
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 化学一般
  • 材料科学一般

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