@inproceedings{3aebb9443b7a46d7b9b166220efb321f,
title = "Bulk and surface effects on the polytype stability in SiC crystals",
abstract = "We investigated with ab initio calculations the 3C-, 6H-, 4H- and 2H-SiC polytypes. We discuss the geometry and the energetics of bulk and surface relaxed structures ((0001) Si face and the (00{\=0}1) C face surfaces). The polytype stability is discussed regarding the bulk and surface effects.",
keywords = "Bulk, Crystal growth, DFT, Polytype stability, Surface",
author = "Fr{\'e}d{\'e}ric Mercier and Nishizawa, \{Shin ichi\}",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.41",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "41--44",
editor = "Devaty, \{Robert P.\} and Michael Dudley and Chow, \{T. Paul\} and Neudeck, \{Philip G.\}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}