Atomically flat planarization of Ge(100), (110), and (111) surfaces in H2 annealing

Tomonori Nishimura, Shoichi Kabuyanagi, Wenfeng Zhang, Choong Hyun Lee, Takeaki Yajima, Kosuke Nagashio, Akira Toriumi

研究成果: ジャーナルへの寄稿学術誌査読

15 被引用数 (Scopus)

抄録

We demonstrate that Ge(100), (110), and (111) Ge surfaces are planarized with atomic level step and terrace structures in H2 annealing. The temperature required for such planarization is different among the three orientations. The step edge structure on the Ge(100) surface is composed of alternate smooth and rough steps (Sa + Sb steps) owing to the (2 × 1) reconstruction on that surface. It is also shown that the terrace widths on the Ge(110) and (111) surfaces are on average controlled by adjusting the off-angle from the respective surface orientation.

本文言語英語
論文番号051301
ジャーナルApplied Physics Express
7
5
DOI
出版ステータス出版済み - 5月 2014
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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