TY - CHAP
T1 - Atomic structures and electronic properties of semiconductor interfaces
AU - Nakayama, T.
AU - Kangawa, Y.
AU - Shiraishi, K.
N1 - Publisher Copyright:
© 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.
PY - 2024/1/1
Y1 - 2024/1/1
N2 - Atomic and electronic structures of semiconductor interfaces are explained, focusing on fundamental physics revealed by recent researches. To understand atomic structures, it is essential to understand how the interface is formed and how stable the interface is. We consider these by illustrating the epitaxial growth and oxidation processes and explaining key concepts such as the growth diagram, growth modes, stress release, and defect generation. On the other hand, the most important quantities to characterize the interface electronic structures are the Schottky barrier and the band offset, because they govern most transport and optical properties around interfaces. The origins of these quantities are explained, using key concepts such as the interface states, charge neutrality level, band bending, and Fermi-level pinning. Prospects for future trend of interface investigations are also illustrated.
AB - Atomic and electronic structures of semiconductor interfaces are explained, focusing on fundamental physics revealed by recent researches. To understand atomic structures, it is essential to understand how the interface is formed and how stable the interface is. We consider these by illustrating the epitaxial growth and oxidation processes and explaining key concepts such as the growth diagram, growth modes, stress release, and defect generation. On the other hand, the most important quantities to characterize the interface electronic structures are the Schottky barrier and the band offset, because they govern most transport and optical properties around interfaces. The origins of these quantities are explained, using key concepts such as the interface states, charge neutrality level, band bending, and Fermi-level pinning. Prospects for future trend of interface investigations are also illustrated.
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U2 - 10.1016/B978-0-323-96027-4.10003-8
DO - 10.1016/B978-0-323-96027-4.10003-8
M3 - Chapter
AN - SCOPUS:85217073346
SN - 9780323960274
VL - 1
SP - V1:73-V1:133
BT - Comprehensive Semiconductor Science and Technology, Second Edition
PB - Elsevier
ER -