Atomic structures and electronic properties of semiconductor interfaces

T. Nakayama, Y. Kangawa, K. Shiraishi

研究成果: 書籍/レポート タイプへの寄稿

抄録

Atomic and electronic structures of semiconductor interfaces are explained, focusing on fundamental physics revealed by recent researches. To understand atomic structures, it is essential to understand how the interface is formed and how stable the interface is. We consider these by illustrating the epitaxial growth and oxidation processes and explaining key concepts such as the growth diagram, growth modes, stress release, and defect generation. On the other hand, the most important quantities to characterize the interface electronic structures are the Schottky barrier and the band offset, because they govern most transport and optical properties around interfaces. The origins of these quantities are explained, using key concepts such as the interface states, charge neutrality level, band bending, and Fermi-level pinning. Prospects for future trend of interface investigations are also illustrated.

本文言語英語
ホスト出版物のタイトルComprehensive Semiconductor Science and Technology, Second Edition
ホスト出版物のサブタイトルVolumes 1-3
出版社Elsevier
ページV1:73-V1:133
1
ISBN(電子版)9780323958196
ISBN(印刷版)9780323960274
DOI
出版ステータス出版済み - 1月 1 2024

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 材料科学一般

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