Atomic force microscopic investigations of MoS2 thin films produced by low pressure sulfurization

Sampad Ghosh, Shamal Chandra Karmaker, Sivasankaran Harish, Bidyut Baran Saha

研究成果: ジャーナルへの寄稿学術誌査読

抄録

Molybdenum disulfide (MoS2) thin films were produced on Si/SiO2 substrate by low pressure sulfurization of molybdenum (Mo) film. Mo films are treated with sulfur vapor at different temperatures to investigate the effect of growth temperature on the structural and morphological features of MoS2 films. Raman measurements confirmed the existence of multilayer MoS2. Atomic force microscopy (AFM) measures film thickness and examines surface topography. The statistical analysis of variance (ANOVA) technique is applied to assess temperature effects and validate AFM findings. The growth temperature affects film thickness, surface roughness and grain size. Thickness increases with an increase in temperature while the roughness decreases. The least roughness is obtained when MoS2 is produced at 800 °C. Interestingly, the grain size initially increases with increasing temperature and then drops. The largest grain size is found for sulfurization at 750 °C. These findings will help adjust MoS2 thin film morphology and crystalline quality.

本文言語英語
論文番号207400
ジャーナルMicro and Nanostructures
170
DOI
出版ステータス出版済み - 10月 2022

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 生体材料
  • 凝縮系物理学

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