Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

K. W. Yi; K. Kakimoto; Z. G. Niu; M. Eguchi; H. Noguchi; S. Nakamura; K. Mukai

doi:10.1149/1.1836508

Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

K. W. Yi, K. Kakimoto, Z. G. Niu, M. Eguchi, H. Noguchi, S. Nakamura, K. Mukai

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

13 被引用数 (Scopus)

抄録

Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.

本文言語	英語
ページ（範囲）	722-725
ページ数	4
ジャーナル	Journal of the Electrochemical Society
巻	143
号	2
DOI	https://doi.org/10.1149/1.1836508
出版ステータス	出版済み - 2月 1996
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
再生可能エネルギー、持続可能性、環境
表面、皮膜および薄膜
電気化学
材料化学

UN SDG

この成果は、次の持続可能な開発目標に貢献しています

文献へのアクセス

10.1149/1.1836508

他のファイルとリンク

引用スタイル

@article{232739e0b8ba45ed9286176b4c5ef547,

title = "Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system",

abstract = "Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.",

author = "Yi, {K. W.} and K. Kakimoto and Niu, {Z. G.} and M. Eguchi and H. Noguchi and S. Nakamura and K. Mukai",

year = "1996",

month = feb,

doi = "10.1149/1.1836508",

language = "English",

volume = "143",

pages = "722--725",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

AU - Yi, K. W.

AU - Kakimoto, K.

AU - Niu, Z. G.

AU - Eguchi, M.

AU - Noguchi, H.

AU - Nakamura, S.

AU - Mukai, K.

PY - 1996/2

Y1 - 1996/2

N2 - Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.

AB - Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.

UR - http://www.scopus.com/inward/record.url?scp=0030081605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030081605&partnerID=8YFLogxK

U2 - 10.1149/1.1836508

DO - 10.1149/1.1836508

M3 - Article

AN - SCOPUS:0030081605

SN - 0013-4651

VL - 143

SP - 722

EP - 725

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -

Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

抄録

!!!All Science Journal Classification (ASJC) codes

UN SDG

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル