Anti-surfactant in III-nitride epitaxy - quantum dot formation and dislocation termination

Satoru Tanaka, Misaichi Takeuchi, Yoshinobu Aoyagi

研究成果: ジャーナルへの寄稿学術誌査読

173 被引用数 (Scopus)

抄録

A new approach toward epitaxial growth of group III nitrides using an `anti-surfactant' is presented. Two unique phenomena, quantum dot formation and dislocation termination, were recognized using this approach. The presence of Si atoms as an anti-surfactant on (Al)GaN surfaces modified the nitride epitaxial growth kinetics. These phenomena appeared to be independent; however, the growth mechanisms indicated a common surface event, which included the formation of a monolayer thick Si-N mask (nano-mask) within the fractional coverage on the surface. The SiN nano-mask influenced the morphology of the deposited GaN surface, i.e. quantum structures, and also contributed to the termination of threading dislocations in GaN films.

本文言語英語
ページ(範囲)L831-L834
ジャーナルJapanese Journal of Applied Physics
39
8 B
DOI
出版ステータス出版済み - 8月 15 2000
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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