TY - JOUR
T1 - Anomalous Screening Effect of Superlattice-Doped GaAs / (Al,Ga)As Heterostructures under Illumination
AU - Liu, Xiao Fei
AU - Spitzer, Nikolai
AU - Kiyama, Haruki
AU - Ludwig, Arne
AU - Wieck, Andreas D.
AU - Oiwa, Akira
N1 - Funding Information:
We thank Gabriel Gulak Maia, Genki Fukuda, and Hiroki Shioya for the help of measurements. This work is supported by JSPS Grants-in-Aid for Scientific Research Grant No. JP17H06120; JST CREST Grant No. JPMJCR15N2; JST Moonshot R&D Grant No.JPMJMS2066; the Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials; and NRC Challenge Program (QSP013). N.S., A.L., and A.D.W. acknowledge the support of DFG-TRR160 and BMBF-QR.X Project 16KISQ009.
Publisher Copyright:
© 2023 American Physical Society.
PY - 2023/2
Y1 - 2023/2
N2 - The GaAs/(Al,Ga)As heterostructure with short-period superlattice (SPSL) doping possesses ultrahigh mobility of its two-dimensional electron gas by placing donors within the remote GaAs layers. Here, we investigate its magnetotransport property under a heavily doped situation. After long enough illumination at cryogenic temperature, the change of the electron concentration inside the quantum well (QW) is only 5.9%. Meanwhile, the quantum lifetime τq,QW of the electron shows an anomalous behavior. It increases slightly and then exhibits an exponential decay until saturation. This is different from the monotonic increase of τq,QW under illumination for the conventional doping situation. The increase of τq,QW originates from the larger donor filling-fraction-enhanced screening effect. Meanwhile, the decrease of τq,QW may be caused by stronger scattering of ionized d+ states evolved from DX centers. The transfer of excess electrons between the AlAs layers can also cause the decrease of τq,QW. This work provides an insight into the mechanism of DX centers on the quantum transport properties of SPSL-doped heterostructures.
AB - The GaAs/(Al,Ga)As heterostructure with short-period superlattice (SPSL) doping possesses ultrahigh mobility of its two-dimensional electron gas by placing donors within the remote GaAs layers. Here, we investigate its magnetotransport property under a heavily doped situation. After long enough illumination at cryogenic temperature, the change of the electron concentration inside the quantum well (QW) is only 5.9%. Meanwhile, the quantum lifetime τq,QW of the electron shows an anomalous behavior. It increases slightly and then exhibits an exponential decay until saturation. This is different from the monotonic increase of τq,QW under illumination for the conventional doping situation. The increase of τq,QW originates from the larger donor filling-fraction-enhanced screening effect. Meanwhile, the decrease of τq,QW may be caused by stronger scattering of ionized d+ states evolved from DX centers. The transfer of excess electrons between the AlAs layers can also cause the decrease of τq,QW. This work provides an insight into the mechanism of DX centers on the quantum transport properties of SPSL-doped heterostructures.
UR - http://www.scopus.com/inward/record.url?scp=85149588907&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85149588907&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.19.024056
DO - 10.1103/PhysRevApplied.19.024056
M3 - Article
AN - SCOPUS:85149588907
SN - 2331-7019
VL - 19
JO - Physical Review Applied
JF - Physical Review Applied
IS - 2
M1 - 024056
ER -