Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

Nan Guo; Weida Hu; Lei Liao; Sen Po Yip; Johnny C. Ho; Jinshui Miao; Zhi Zhang; Jin Zou; Tao Jiang; Shiwei Wu; Xiaoshuang Chen; Wei Lu

doi:10.1002/adma.201403664

Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

Nan Guo, Weida Hu, Lei Liao, Sen Po Yip, Johnny C. Ho, Jinshui Miao, Zhi Zhang, Jin Zou, Tao Jiang, Shiwei Wu, Xiaoshuang Chen, Wei Lu

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

170 被引用数 (Scopus)

抄録

(Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.

本文言語	英語
ページ（範囲）	8203-8209
ページ数	7
ジャーナル	Advanced Materials
巻	26
号	48
DOI	https://doi.org/10.1002/adma.201403664
出版ステータス	出版済み - 12月 2014
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

材料科学（全般）
材料力学
機械工学

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10.1002/adma.201403664

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title = "Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature",

abstract = "(Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.",

author = "Nan Guo and Weida Hu and Lei Liao and Yip, {Sen Po} and Ho, {Johnny C.} and Jinshui Miao and Zhi Zhang and Jin Zou and Tao Jiang and Shiwei Wu and Xiaoshuang Chen and Wei Lu",

note = "Publisher Copyright: {\textcopyright} 2014 Wiley-VCH Verlag GmbH & Co. KGaA.",

year = "2014",

month = dec,

doi = "10.1002/adma.201403664",

language = "English",

volume = "26",

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journal = "Advanced Materials",

issn = "0935-9648",

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TY - JOUR

T1 - Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

AU - Guo, Nan

AU - Hu, Weida

AU - Liao, Lei

AU - Yip, Sen Po

AU - Ho, Johnny C.

AU - Miao, Jinshui

AU - Zhang, Zhi

AU - Zou, Jin

AU - Jiang, Tao

AU - Wu, Shiwei

AU - Chen, Xiaoshuang

AU - Lu, Wei

PY - 2014/12

Y1 - 2014/12

N2 - (Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.

AB - (Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.

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UR - http://www.scopus.com/inward/citedby.url?scp=84920196152&partnerID=8YFLogxK

U2 - 10.1002/adma.201403664

DO - 10.1002/adma.201403664

M3 - Article

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SN - 0935-9648

VL - 26

SP - 8203

EP - 8209

JO - Advanced Materials

JF - Advanced Materials

IS - 48

ER -

Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

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!!!All Science Journal Classification (ASJC) codes

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