Annealing effects on transition region at Si-SiO2 interface
Yi Qun Zhang, Akira Kikutake, Shuichi Wada, Takashi Nakashige, Dong Ju Bai, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Noboru Teshima, Hiroshi Mori, Toshio Tsurushima
研究成果: ジャーナルへの寄稿 › 学術誌 › 査読