@inproceedings{2e4d36ad5b514defaf35f23ae8006c36,
title = "Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction",
abstract = "The scavenging kinetics of ultra-thin-SiO2 interface layer (IL) in HfO2/SiO2/Si stacks is investigated by focusing on SiO2/Si interface reaction in addition to both O and Si atom kinetics. SiO2/Si interface serves as a stage that the oxygen vacancy (VO) is converted to Si release from SiO2 with the help of Si substrate. Based on both diffusion kinetics and possible reaction, an analytical model for two-stage SiO2-IL scavenging in high-k gate stack is proposed.",
author = "Xiuyan Li and Takeaki Yajima and Tomonori Nishimura and Kosuke Nagashio and Akira Toriumi",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",
year = "2015",
month = feb,
day = "20",
doi = "10.1109/IEDM.2014.7047094",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "February",
pages = "21.2.1--21.2.4",
booktitle = "2014 IEEE International Electron Devices Meeting, IEDM 2014",
address = "United States",
edition = "February",
}