Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells

Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano, Lijun Liu, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

研究成果: ジャーナルへの寄稿学術誌査読

55 被引用数 (Scopus)

抄録

We studied the process of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidification process. We investigated the boundary layer thickness of oxygen concentration near a crucible wall region using Fourier transform infrared spectrometer (FTIR) measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated to be 2-6 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to those estimated by analytical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si3N4 to the melt during growth process.

本文言語英語
ページ(範囲)2204-2208
ページ数5
ジャーナルJournal of Crystal Growth
310
7-9
DOI
出版ステータス出版済み - 4月 2008

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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