TY - GEN
T1 - Analysis of high mobility oxide thin-film transistors after a low temperature annealing process
AU - Bermundo, Juan Paolo
AU - Ishikawa, Yasuaki
AU - Fujii, Mami N.
AU - Kulchaisit, Chaiyanan
AU - Ikenoue, Hiroshi
AU - Uraoka, Yukiharu
N1 - Publisher Copyright:
© 2016 Society for Information Display. All rights reserved.
PY - 2016
Y1 - 2016
N2 - High mobilities of more than 40 cm2/Vs in amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) were achieved through a low temperature excimer laser annealing process (ELA). The improvement mechanism was determined by analyzing the changes in electrical characteristics, composition, structure, and chemical bonding of the oxide semiconductor.
AB - High mobilities of more than 40 cm2/Vs in amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) were achieved through a low temperature excimer laser annealing process (ELA). The improvement mechanism was determined by analyzing the changes in electrical characteristics, composition, structure, and chemical bonding of the oxide semiconductor.
UR - http://www.scopus.com/inward/record.url?scp=85050646229&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050646229&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85050646229
T3 - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
SP - 76
EP - 77
BT - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PB - Society for Information Display
T2 - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Y2 - 7 December 2016 through 9 December 2016
ER -