An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO ₂/GeO ₂ bilayer passivation

Engineering

• Metal-Insulator-Semiconductor Capacitor 100%
• Density 83%
• Passivation 50%
• Annealing 33%
• Interface State 33%
• Metallizations 33%
• Temperature 16%
• Mechanisms 16%
• Film Quality 16%
• Field-Effect Transistor 16%
• Bias Voltage 16%
• Gate Dielectric 16%
• Defects 16%
• Reverse Bias 16%
• Dielectric Film 16%
• Layer Interface 16%
• Interfacial Layer 16%
• Energy Distribution 16%

Physics

• Passivity 50%
• Annealing 33%
• Value 16%
• Temperature 16%
• Metal 16%
• Semiconductor 16%
• Pulses 16%
• Mobility 16%
• Field Effect Transistor 16%
• Insulators 16%
• Gaps 16%
• Injection 16%
• Defects 16%
• Energy Distribution 16%

Material Science

• Characterization 33%
• Deep-Level Transient Spectroscopy 33%
• Semiconductor Material 16%
• Defect 16%
• Dielectric Films 16%