The authors developed an ambipolar field-effect transistor (FET) based on an organic-inorganic hybrid structure that consisted of an indium zinc oxide and pentacene double layer fabricated on a Si O2 n++ -Si substrate. Although the FETs based on an indium zinc oxide or pentacene single layer only showed unipolar FET characteristics, the hybrid FET showed definite ambipolar FET characteristics. The authors obtained a highly saturated field-effect hole and electron mobilities of 0.14 and 13.8 cm2 V s. Furthermore, the authors demonstrated electroluminescence from hybrid FETs using tetracene as an emitting layer. The authors' success shows that the hybridization of organic and inorganic materials opens up a new field in electronics.
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