Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

Yun Sok Shin; Roland Brunner; Akihiro Shibatomi; Toshiaki Obata; Tomohiro Otsuka; Jun Yoneda; Yasuhiro Shiraki; Kentarou Sawano; Yasuhiro Tokura; Yuichi Harada; Koji Ishibashi; Seigo Tarucha

doi:10.1088/0268-1242/26/5/055004

Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

Yun Sok Shin, Roland Brunner, Akihiro Shibatomi, Toshiaki Obata, Tomohiro Otsuka, Jun Yoneda, Yasuhiro Shiraki, Kentarou Sawano, Yasuhiro Tokura, Yuichi Harada, Koji Ishibashi, Seigo Tarucha

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

3 被引用数 (Scopus)

抄録

We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al₂O₃ film. In comparison to the conventional surface Schottky gates, gating through a thin Al₂O ₃ layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.

本文言語	英語
論文番号	055004
ジャーナル	Semiconductor Science and Technology
巻	26
号	5
DOI	https://doi.org/10.1088/0268-1242/26/5/055004
出版ステータス	出版済み - 2011
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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10.1088/0268-1242/26/5/055004

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title = "Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems",

abstract = "We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O 3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.",

author = "Shin, {Yun Sok} and Roland Brunner and Akihiro Shibatomi and Toshiaki Obata and Tomohiro Otsuka and Jun Yoneda and Yasuhiro Shiraki and Kentarou Sawano and Yasuhiro Tokura and Yuichi Harada and Koji Ishibashi and Seigo Tarucha",

year = "2011",

doi = "10.1088/0268-1242/26/5/055004",

language = "English",

volume = "26",

journal = "Semiconductor Science and Technology",

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TY - JOUR

T1 - Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

AU - Shin, Yun Sok

AU - Brunner, Roland

AU - Shibatomi, Akihiro

AU - Obata, Toshiaki

AU - Otsuka, Tomohiro

AU - Yoneda, Jun

AU - Shiraki, Yasuhiro

AU - Sawano, Kentarou

AU - Tokura, Yasuhiro

AU - Harada, Yuichi

AU - Ishibashi, Koji

AU - Tarucha, Seigo

PY - 2011

Y1 - 2011

N2 - We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O 3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.

AB - We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O 3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.

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U2 - 10.1088/0268-1242/26/5/055004

DO - 10.1088/0268-1242/26/5/055004

M3 - Article

AN - SCOPUS:79953239427

SN - 0268-1242

VL - 26

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

M1 - 055004

ER -

Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

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!!!All Science Journal Classification (ASJC) codes

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