TY - JOUR
T1 - Aligned growth of ZnO nanowires and lasing in single ZnO nanowire optical cavities
AU - Guo, R. Q.
AU - Nishimura, J.
AU - Matsumoto, M.
AU - Higashihata, M.
AU - Nakamura, Daisuke
AU - Suehiro, Junya
AU - Okada, T.
PY - 2008/3/1
Y1 - 2008/3/1
N2 - Ordered ZnO nanowire arrays have been fabricated in N2 background gas by catalyst-free nanoparticle-assisted pulsed-laser deposition. A single ZnO nanowire was collected in an electrode gap by dielectrophoresis. Under the optical pumping above an exciting laser (λ=∈355 nm) threshold of ∼ 334 kW/cm2, ultraviolet lasing action in a single ZnO nanowire was observed at room temperature, indicating that the as-synthesized nanowires in pure N2 background gas are of high quality. The crystalline facets of both ends of the nanowire acted to form an optical cavity. Therefore, the mode spacings corresponding to cavity lengths of the respective nanowires were observed in photoluminescence spectra.
AB - Ordered ZnO nanowire arrays have been fabricated in N2 background gas by catalyst-free nanoparticle-assisted pulsed-laser deposition. A single ZnO nanowire was collected in an electrode gap by dielectrophoresis. Under the optical pumping above an exciting laser (λ=∈355 nm) threshold of ∼ 334 kW/cm2, ultraviolet lasing action in a single ZnO nanowire was observed at room temperature, indicating that the as-synthesized nanowires in pure N2 background gas are of high quality. The crystalline facets of both ends of the nanowire acted to form an optical cavity. Therefore, the mode spacings corresponding to cavity lengths of the respective nanowires were observed in photoluminescence spectra.
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U2 - 10.1007/s00340-007-2891-4
DO - 10.1007/s00340-007-2891-4
M3 - Article
AN - SCOPUS:40149103757
SN - 0946-2171
VL - 90
SP - 539
EP - 542
JO - Applied Physics B: Lasers and Optics
JF - Applied Physics B: Lasers and Optics
IS - 3-4
ER -