Activated slip systems in β-silicon nitride during high temperature deformation

Kouichi Kawahara, Sadahiro Tsurekawa, Hideharu Nakashima

研究成果: ジャーナルへの寄稿学術誌査読

5 被引用数 (Scopus)


In order to clarify the activated slip systems of β-silicon nitride (Si3N4) during high temperature deformation, we have studied the dislocation structures in hot-pressed β-Si3N4 deformed at temperatures from 1820 to 2020 K with strain rates from 9×10-6 to 2×10-4 s-1. Analysis of the dislocations by transmission electron microscopy revealed that the most of dislocations in β-Si3N4 plasticaly deformed at high temperatures were c dislocations which were mobile on the {1010} as a primary slip plane. Moreover, a dislocations on the {1010} slip plane were also found to be mobile. The density of a dislocations to that of c dislocations was roughly estimated to be the ratio of 1 : 10, irrespective of the deformation condition. In addition, (a+c) dislocations gliding on the {1121} pyramidal plane were seen to be activated only under the limited deformation conditions at which β-Si3N4 showed a fairly good ductility without crack formation. The density of (a+c) dislocations was about two orders of magnitude lower than that of c dislocations.

ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
出版ステータス出版済み - 1996

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 材料力学
  • 金属および合金
  • 材料化学


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