A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

Yuki Yamashita, Daisuke Kanemoto, Haruichi Kanaya, Ramesh K. Pokharel, Keiji Yoshida

研究成果: ジャーナルへの寄稿学術誌査読

3 被引用数 (Scopus)

抄録

This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-μm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm2. The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4% power-added efficiency with 2.3V power supply voltage into a 50 Ω load.

本文言語英語
論文番号20130174
ジャーナルIEICE Electronics Express
10
8
DOI
出版ステータス出版済み - 2013

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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