TY - GEN
T1 - 1.54μm luminescence of β-FeSi 2 grown on Au-coated Si substrates
AU - Akiyama, Kensuke
AU - Funakubo, Hiroshi
AU - Itakura, Masaru
N1 - Funding Information:
The authors would like to express great thanks to Teiko Kadowaki (Kanagawa Industrial Technology Center) for fruitful XRD measurement, and express thanks to Shogo Takahara (Kyusyu University) for fruitful TEM observation. This work was supported by the Grant-in-Aid for Scientific Research (C)(23560018) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT).
PY - 2012
Y1 - 2012
N2 - A clear PL spectrum was observed from β-FeSi 2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi 2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi 2 grains on Au-coated Si substrates than that of β-FeSi 2 film on Cu-coated Si. Au was not detected in β-FeSi 2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi 2 and rolled as non-radiative recombination center.
AB - A clear PL spectrum was observed from β-FeSi 2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi 2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi 2 grains on Au-coated Si substrates than that of β-FeSi 2 film on Cu-coated Si. Au was not detected in β-FeSi 2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi 2 and rolled as non-radiative recombination center.
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U2 - 10.1557/opl.2012.85
DO - 10.1557/opl.2012.85
M3 - Conference contribution
AN - SCOPUS:84864973344
SN - 9781605113739
T3 - Materials Research Society Symposium Proceedings
SP - 71
EP - 76
BT - Compound Semiconductors for Generating, Emitting and Manipulating Energy
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 2 December 2011
ER -