TY - GEN
T1 - 1.0 THz detection by InAs quantum-well MOSHEMT using GSG THz probe
AU - Kume, Eiji
AU - Ishii, Hiroyuki
AU - Hattori, Hiroyuki
AU - Chang, Wen Hsin
AU - Mukai, Yuichi
AU - Ogura, Mutsuo
AU - Kanaya, Haruichi
AU - Asano, Tanemasa
AU - Maeda, Tatsuro
N1 - Funding Information:
This work was supported by JST CREST (Grant Number: JPMJCR1431), Japan. A part of the device fabrication was carried out at AIST-NPF.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/26
Y1 - 2018/7/26
N2 - Terahertz wave of 1.0 THz using ground-signal-ground (GSG) THz probe was detected by InAs quantum-well (QW) MOSHEMT. The clear response curves were obtained by the detector of which DC source (ground) terminal unconnected to the ground line of GSG THz probe. The responsivity of 10,755 kV/W with lock-in amplifier gain was achieved and noise equivalent power (NEP) of 156 pW/Hz0.5 was estimated.
AB - Terahertz wave of 1.0 THz using ground-signal-ground (GSG) THz probe was detected by InAs quantum-well (QW) MOSHEMT. The clear response curves were obtained by the detector of which DC source (ground) terminal unconnected to the ground line of GSG THz probe. The responsivity of 10,755 kV/W with lock-in amplifier gain was achieved and noise equivalent power (NEP) of 156 pW/Hz0.5 was estimated.
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U2 - 10.1109/EDTM.2018.8421467
DO - 10.1109/EDTM.2018.8421467
M3 - Conference contribution
AN - SCOPUS:85051486253
SN - 9781538637111
T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
SP - 289
EP - 291
BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Y2 - 13 March 2018 through 16 March 2018
ER -