Keita Katayama

Scopus著者プロファイル

ウェブサイトhttps://hyoka.ofc.kyushu-u.ac.jp/html/100021207_ja.html

h-index

年別の研究成果

フィンガープリント

Keita Katayamaが活動している研究トピックを掘り下げます。このトピックラベルは、この研究者の研究成果に基づきます。これらがまとまってユニークなフィンガープリントを構成します。

1 類似のプロファイル

6 会議への寄与
5 学術誌
2 会議記事

Joint quality assessment by machine learning using characterized surface thermal radiation images of laser welding process
Kikuchi, T., Takabatake, R., Katayama, K., Ikenoue, H. & Nakamura, D., 2024, High-Power Laser Materials Processing: Applications, Diagnostics, and Systems XIII. Kaierle, S. & Kleine, K. R. (eds.). SPIE, 128780E. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 12878).
研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与
Threshold voltage uniformity improvement by introducing charge injection tuning for low-temperature poly-Si thin film transistors with metal/oxide/nitride/oxide/silicon structure
Goto, T., Suwa, T., Katayama, K., Nishida, S., Ikenoue, H. & Sugawa, S., 2月 29 2024, In: Japanese journal of applied physics. 63, 2, 02SP51.
研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access
1 被引用数 (Scopus)
Excimer Laser Doping for PN Junction Formation with Extremely Low Thermal Budget
Aoki, R., Katayama, K., Nakamura, D., Ikenoue, H. & Sadoh, T., 2023, 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 159-160 2 p. (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).
研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与
1 被引用数 (Scopus)
Excimer laser doping for the fabrication of 4H-SiC power devices
Kakimoto, Y., Katayama, K., Yasunami, T., Goto, T., Nakamura, D. & Ikenoue, H., 2023, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII. Narazaki, A., Gemini, L. & Kleinert, J. (eds.). SPIE, 124080M. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 12408).
研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与
Laser doping mechanism of 4H-SiC by KrF excimer laser irradiation using SiNx thin films
Yasunami, T., Nakamura, D., Katayama, K., Kakimoto, Y., Kikuchi, T. & Ikenoue, H., 4月 1 2023, In: Japanese journal of applied physics. 62, SC, SC1039.
研究成果: ジャーナルへの寄稿 › 学術誌 › 査読
4 被引用数 (Scopus)

片山慶太

フィンガープリント

過去5年の共同研究と上位研究分野

詳細を開く

Joint quality assessment by machine learning using characterized surface thermal radiation images of laser welding process

Threshold voltage uniformity improvement by introducing charge injection tuning for low-temperature poly-Si thin film transistors with metal/oxide/nitride/oxide/silicon structure

Excimer Laser Doping for PN Junction Formation with Extremely Low Thermal Budget

Excimer laser doping for the fabrication of 4H-SiC power devices

Laser doping mechanism of 4H-SiC by KrF excimer laser irradiation using SiNx thin films

片山 慶太

フィンガープリント

過去5年の共同研究と上位研究分野

研究成果

Joint quality assessment by machine learning using characterized surface thermal radiation images of laser welding process

Threshold voltage uniformity improvement by introducing charge injection tuning for low-temperature poly-Si thin film transistors with metal/oxide/nitride/oxide/silicon structure

Excimer Laser Doping for PN Junction Formation with Extremely Low Thermal Budget

Excimer laser doping for the fabrication of 4H-SiC power devices

Laser doping mechanism of 4H-SiC by KrF excimer laser irradiation using SiNx thin films

片山慶太