Kazunari Kurita

Scopus著者プロファイル

ウェブサイトhttps://hyoka.ofc.kyushu-u.ac.jp/html/100026370_ja.html

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年別の研究成果

フィンガープリント

Kazunari Kuritaが活動している研究トピックを掘り下げます。このトピックラベルは、この研究者の研究成果に基づきます。これらがまとまってユニークなフィンガープリントを構成します。

1 類似のプロファイル

56 学術誌
18 会議への寄与
3 コメント/討論
2 会議記事
その他
- 1 総説

Fe gettering behavior in proximity gettering silicon epitaxial wafer using SiH_x and C₂H_y mixture molecular ion implantation
Hirose, R., Onaka-Masada, A., Okuyama, R., Kadono, T., Kobayashi, K., Suzuki, A., Koga, Y. & Kurita, K., 2月 2025, In: MRS Advances. 10, 2, p. 202-207 6 p.
研究成果: ジャーナルへの寄稿 › 学術誌 › 査読
Impact of Cumulative Pulsed Laser Irradiation on Recrystallization of Amorphized C₃H₅-Molecular-Ion-Implanted Silicon Substrate Surface
Kobayashi, K., Okuyama, R., Kadono, T., Onaka-Masada, A., Hirose, R., Suzuki, A., Nagatomo, S., Koga, Y. & Kurita, K., 2025, 22nd International Workshop on Junction Technology, IWJT 2025. Institute of Electrical and Electronics Engineers Inc., p. 12-15 4 p. (22nd International Workshop on Junction Technology, IWJT 2025).
研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与
Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the pn-Junction Diode Fabrication Process
Nagatomo, S., Kadono, T., Hirose, R., Kobayashi, K., Sasaki, S. & Kurita, K., 2025, In: IEEE Journal of the Electron Devices Society. 13, p. 1282-1287 6 p.
研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access
Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the Pn-Junction Diode Fabrication Process
Nagatomo, S., Kadono, T., Hirose, R., Kobayashi, K., Sasaki, S. & Kurita, K., 2025, 22nd International Workshop on Junction Technology, IWJT 2025. Institute of Electrical and Electronics Engineers Inc., p. 8-11 4 p. (22nd International Workshop on Junction Technology, IWJT 2025).
研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与
Novel Production Concept of CH₂F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3D-Stacked CMOS Image Sensors
Hirose, R., Kobayashi, K., Nagatomo, S., Kadono, T. & Kurita, K., 2025, 22nd International Workshop on Junction Technology, IWJT 2025. Institute of Electrical and Electronics Engineers Inc., p. 4-7 4 p. (22nd International Workshop on Junction Technology, IWJT 2025).
研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

栗田一成

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過去5年の共同研究と上位研究分野

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Fe gettering behavior in proximity gettering silicon epitaxial wafer using SiH_x and C₂H_y mixture molecular ion implantation

Impact of Cumulative Pulsed Laser Irradiation on Recrystallization of Amorphized C₃H₅-Molecular-Ion-Implanted Silicon Substrate Surface

Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the pn-Junction Diode Fabrication Process

Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the Pn-Junction Diode Fabrication Process

Novel Production Concept of CH₂F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3D-Stacked CMOS Image Sensors

栗田 一成

フィンガープリント

過去5年の共同研究と上位研究分野

研究成果

Fe gettering behavior in proximity gettering silicon epitaxial wafer using SiHx and C2Hy mixture molecular ion implantation

Impact of Cumulative Pulsed Laser Irradiation on Recrystallization of Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface

Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the pn-Junction Diode Fabrication Process

Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the Pn-Junction Diode Fabrication Process

Novel Production Concept of CH2F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3D-Stacked CMOS Image Sensors

栗田一成

Fe gettering behavior in proximity gettering silicon epitaxial wafer using SiH_x and C₂H_y mixture molecular ion implantation

Impact of Cumulative Pulsed Laser Irradiation on Recrystallization of Amorphized C₃H₅-Molecular-Ion-Implanted Silicon Substrate Surface

Novel Production Concept of CH₂F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3D-Stacked CMOS Image Sensors