Energy Engineering Sciences

2025

Al₂O₃ growth on Ge by low-temperature (∼90 °C) atomic layer deposition and its application for MOS devices

Aso, T., Kuwazuru, H., Wang, D. & Yamamoto, K., 5月 2025, In: Materials Science in Semiconductor Processing. 190, 109372.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices

Loo, R., Akula, A., Shimura, Y., Porret, C., Rosseel, E., Dursap, T., Hikavyy, A. Y., Beggiato, M., Bogdanowicz, J., Merkulov, A., Ayyad, M., Han, H., Richard, O., Impagnatiello, A., Wang, D., Yamamoto, K., Sipőcz, T., Kerekes, Mertens, H. & Horiguchi, N. & 1 others, Langer, R., 1月 2025, In: ECS Journal of Solid State Science and Technology. 14, 1, 015003.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

2 被引用数 (Scopus)

2024

Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback method

Shimizu, N., Wang, D., Nakashima, H. & Yamamoto, K., 2024, In: ECS Journal of Solid State Science and Technology. 13, 044001, 044001.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

Ge-on-insulator fabrication based on Ge-on-nothing technology

Yamamoto, K., Wang, D., Loo, R., Porret, C., Cho, J., Dessein, K. & Depauw, V., 4月 1 2024, In: Japanese journal of applied physics. 63, 4, 04SP32.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

1 被引用数 (Scopus)

Ge-on-Insulator Fabrication based on Ge-on-Nothing Technology

Yamamoto, K., Wang, D., Loo, R., Porret, C., Cho, J., Dessein, K. & Depauw, V., 4月 2 2024, In: Japanese Journal of Applied Physics. 63, 04SP32, p. 04SP32

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage

Kuwazuru, H., Aso, T., Wang, D. & Yamamoto, K., 8月 1 2024, In: Materials Science in Semiconductor Processing. 178, 108427.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

1 被引用数 (Scopus)

Low Temperature (210 °C) Fabrication of Ge MOS Capacitor and Controllability of Its Flatband Voltage

Kuwazuru, H., Aso, T., Wang, D. & Yamamoto, K., 8月 2024, In: Materials Science in Semiconductor Processing. 178, 108427, p. 108427

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization

Huang, L., Moto, K., Igura, K., Ishiyama, T., Toko, K., Wang, D. & Yamamoto, K., 1月 5 2024, In: Japanese Journal of Applied Physics. 63, p. 02SP42

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

3 被引用数 (Scopus)

2023

Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics

Wen, W. C., Wang, D., Nakashima, H. & Yamamoto, K., 8月 1 2023, In: Materials Science in Semiconductor Processing. 162, 107504.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

1 被引用数 (Scopus)

Fabrication of transparent Ce³⁺-doped (Gd,Lu)₃Al₅O₁₂ ceramics by two-step spark plasma sintering

Lee, J. H., Kim, B. N., Li, J. G. & Jang, B. K., 2月 1 2023, In: Ceramics International. 49, 3, p. 4839-4845 7 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

3 被引用数 (Scopus)

Interaction of Gd₂Si₂O₇ with CMAS melts for environmental barrier coatings

Kim, S. H., Nagashima, N., Matsushita, Y. & Jang, B. K., 2月 2023, In: Journal of the European Ceramic Society. 43, 2, p. 593-599 7 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

9 被引用数 (Scopus)

2022

Characterization of ZnO thermoelectric ceramics and their microstructures consolidated by two-step spark plasma sintering

Jeong, A., Ohtaki, M. & Jang, B. K., 11月 1 2022, In: Journal of the Ceramic Society of Japan. 130, 11, p. 889-894 6 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

4 被引用数 (Scopus)

Effect of isothermal heat treatment on nanoindentation hardness and Young's modulus of 4 mol% Y₂O₃-ZrO₂ EB-PVD TBCs

Jang, B. K., Kim, S. H., Fisher, C. A. J. & Kim, H. T., 6月 2022, In: Materials Today Communications. 31, 103330.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

8 被引用数 (Scopus)

High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature—the importance of Coulomb scattering suppression

Yamamoto, K., Wang, D., Nakashima, H., Hishiki, S., Uratani, H., Sakaida, Y. & Kawamura, K., 7月 1 2022, In: Applied Physics Express. 15, 7

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

1 被引用数 (Scopus)

Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultrathin-Films for Advanced TFT

Sadoh, T., Nagano, T., Koga, T., Moto, K. & Yamamoto, K., 2022, In: Proceedings of the International Display Workshops. 29, p. 165-167 3 p.

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

Reaction between environmental barrier coatings material Er₂Si₂O₇ and a calcia-magnesia-alumina-silica melt

Kim, S. H., Fisher, C. A. J., Nagashima, N., Matsushita, Y. & Jang, B. K., 6月 15 2022, In: Ceramics International. 48, 12, p. 17369-17375 7 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

19 被引用数 (Scopus)

Thermoelectric performance of In and Ga single/dual-doped ZnO ceramics fabricated by spark plasma sintering

Jeong, A., Ohtaki, M. & Jang, B. K., 5月 15 2022, In: Ceramics International. 48, 10, p. 14414-14423 10 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

9 被引用数 (Scopus)

2021

Corrosion behavior of calcium–magnesium–aluminosilicate (CMAS) on sintered Gd₂SiO₅ for environmental barrier coatings

Kim, S. H., Nagashima, N., Matsushita, Y., Kim, B. N. & Jang, B. K., 7月 2021, In: Journal of the American Ceramic Society. 104, 7, p. 3119-3129 11 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

15 被引用数 (Scopus)

Effect of annealing on microstructure and luminescence characteristics in spark plasma sintered Ce³⁺-activated (Gd, Lu)₃Al₅O₁₂ garnet ceramics

Lee, J. H., Li, J. G., Kim, B. N., Meng, Q., Sun, X. & Jang, B. K., 2月 2021, In: Journal of the European Ceramic Society. 41, 2, p. 1586-1592 7 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

9 被引用数 (Scopus)

Fabrication of Ge-on-Insulator by Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications

Yamamoto, K., Wang, D. & Nakashima, H., 2021, 240th ECS Meeting - Semiconductor Process Integration 12. 4 ed. IOP Publishing Ltd., p. 157-166 10 p. 157. (ECS Transactions; vol. 104, no. 4).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

2 被引用数 (Scopus)

Fabrication of transparent Y₂O₃ ceramics by two-step spark plasma sintering

Lee, J. H., Kim, B. N. & Jang, B. K., 11月 2021, In: Journal of the American Ceramic Society. 104, 11, p. 5501-5508 8 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

12 被引用数 (Scopus)

High-temperature corrosion of spark plasma sintered Gd₂SiO₅ with volcanic ash for environmental barrier coatings

Kim, S. H., Kim, B. N., Nagashima, N., Matsushita, Y. & Jang, B. K., 5月 2021, In: Journal of the European Ceramic Society. 41, 5, p. 3161-3166 6 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

14 被引用数 (Scopus)

Mechanical properties and phase-transformation behavior of carbon nanotube-reinforced yttria-stabilized zirconia composites

Jang, B. K., Lee, J. H. & Fisher, C. A. J., 12月 15 2021, In: Ceramics International. 47, 24, p. 35287-35293 7 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

17 被引用数 (Scopus)

Microstructural and spectroscopic analysis in non-uniform Y₂O₃ ceramics fabricated by spark plasma sintering

Lee, J. H., Kim, B. N., Hata, S. & Jang, B. K., 1月 2021, In: Journal of the Ceramic Society of Japan. 129, 1, p. 66-72 7 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

3 被引用数 (Scopus)

Schottky barrier height control at metal/Ge interface by insertion of nitrogen contained amorphous layer

Yamamoto, K., Wang, D. & Nakashima, H., 2021, 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16. Simoen, E., Kononchuk, O., Nakatsuka, O. & Claeys, C. (eds.). 4 ed. IOP Publishing Ltd., p. 63-71 9 p. (ECS Transactions; vol. 102, no. 4).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors

Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H. & Toko, K., 12月 1 2021, In: IEEE Electron Device Letters. 42, 12, p. 1735-1738 4 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

17 被引用数 (Scopus)

The effect of vanadium addition on the fracture and wear resistance of indefinite chilled cast iron

Kim, S. H., Baek, E. R. & Jang, B. K., 3月 2021, In: Materials Today Communications. 26, 101819.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

8 被引用数 (Scopus)

Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics

Jeong, A., Suekuni, K., Ohtaki, M. & Jang, B. K., 9月 1 2021, In: Ceramics International. 47, 17, p. 23927-23934 8 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

20 被引用数 (Scopus)

2020

(Invited) Border-Trap Characterization for Ge Gate Stacks with Thin GeO_Xlayer Using Deep-Level Transient Spectroscopy

Nakashima, H., Wen, W.-C., Yamamoto, K. & Wang, D., 9月 8 2020, In: ECS Transactions. 98, 5, p. 395-404 10 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Border-trap characterization for Ge gate stacks with Thin GeO_x layer using deep-level transient spectroscopy

Nakashima, H., Wen, W. C., Yamamoto, K. & Wang, D., 2020, PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. Liu, Q., Hartmann, J. M., Holt, J. R., Gong, X., Jain, V., Niu, G., Masini, G., Ogura, A., Miyazaki, S., Ostling, M., Bi, W., Schulze, A. & Mai, A. (eds.). 5 ed. IOP Publishing Ltd., p. 395-404 10 p. 395. (ECS Transactions; vol. 98, no. 5).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Erratum: Border trap evaluation for SiO₂/GeO₂/Ge gate stacks using deep-level transient spectroscopy (J. Appl. Phys. (2018) 124 (205303) DOI: 10.1063/1.505529)

Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., 4月 30 2020, In: Journal of Applied Physics. 127, 16, 169901.

研究成果: ジャーナルへの寄稿 › コメント/討論 › 査読

Open Access

2 被引用数 (Scopus)

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis

Oka, R., Yamamoto, K., Akamine, H., Wang, D., Nakashima, H., Hishiki, S. & Kawamura, K., 4月 1 2020, In: Japanese journal of applied physics. 59, SG, SGGD17.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

6 被引用数 (Scopus)

Interface trap and border trap characterization for Al₂O₃/GeO_x/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET

Wen, W. C., Nagatomi, Y., Akamine, H., Yamamoto, K., Wang, D. & Nakashima, H., 6月 1 2020, In: AIP Advances. 10, 6, 065119.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

7 被引用数 (Scopus)

Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene

Solís-Fernández, P., Terao, Y., Kawahara, K., Nishiyama, W., Uwanno, T., Lin, Y. C., Yamamoto, K., Nakashima, H., Nakashima, H., Nagashio, K., Hibino, H., Suenaga, K. & Ago, H., 6月 23 2020, In: ACS nano. 14, 6, p. 6834-6844 11 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

34 被引用数 (Scopus)

Mechanical properties and microstructure of Yb₂SiO₅ environmental barrier coatings under isothermal heat treatment

Jang, B. K., Nagashima, N., Kim, S., Oh, Y. S., Lee, S. M. & Kim, H. T., 7月 2020, In: Journal of the European Ceramic Society. 40, 7, p. 2667-2673 7 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

36 被引用数 (Scopus)

Non-uniform sintering behavior during spark plasma sintering of Y₂O₃

Lee, J. H., Kim, B. N. & Jang, B. K., 2月 15 2020, In: Ceramics International. 46, 3, p. 4030-4034 5 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

24 被引用数 (Scopus)

Spark plasma sintered bioceramics–from transparent hydroxyapatite to graphene nanocomposites: a review

Han, Y. H., Gao, R., Bajpai, I., Kim, B. N., Yoshida, H., Nieto, A., Son, H. W., Yun, J., Jang, B. K., Jhung, S., Jingming, Z., Hwang, K. H., Chen, F., Shackelford, J. F. & Kim, S., 2月 17 2020, In: Advances in Applied Ceramics. 119, 2, p. 57-74 18 p.

研究成果: ジャーナルへの寄稿 › 総説 › 査読

10 被引用数 (Scopus)

The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate

Duangchan, S., Yamamoto, K., Wang, D., Nakashima, H. & Baba, A., 4月 2020, 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9117986. (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities

Kanakogi, H., Wen, W.-C., Yamamoto, K., Wang, D. & Nakashima, H., 9月 29 2020, p. 33-34. 2 p.

研究成果: 会議への寄与タイプ › 学会誌 › 査読

Open Access

Underlayer selection to improve the performance of polycrystalline Ge thin film transistors

Imajo, T., Moto, K., Yamamoto, K., Suemasu, T., Nakashima, H. & Toko, K., 2020, PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. Liu, Q., Hartmann, J. M., Holt, J. R., Gong, X., Jain, V., Niu, G., Masini, G., Ogura, A., Miyazaki, S., Ostling, M., Bi, W., Schulze, A. & Mai, A. (eds.). 5 ed. IOP Publishing Ltd., p. 423-427 5 p. 423. (ECS Transactions; vol. 98, no. 5).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

2 被引用数 (Scopus)

2019

Border-trap characterization for Ge gate stacks using deep-level transient spectroscopy

Nakashima, H., Wen, W. C., Yamamoto, K. & Wang, D., 2019, Semiconductor Process Integration 11. Murota, J., Claeys, C., Iwai, H., Tao, M., Deleonibus, S., Mai, A., Shiojima, K. & Cao, Y. (eds.). 4 ed. Electrochemical Society Inc., p. 3-10 8 p. (ECS Transactions; vol. 92, no. 4).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Conduction type control of ge-on-insulator: Combination of smart-Cut^TM and defect elimination

Yamamoto, K., Nakae, K., Akamine, H., Wang, D., Nakashima, H., Alam, M. M., Sawano, K., Xue, Z., Zhang, M. & Di, Z., 2019, ECS Transactions. Eriksson, M. A. & Lagally, M. G. (eds.). 1 ed. IOP Publishing Ltd., p. 73-77 5 p. (ECS Transactions; vol. 93, no. 1).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

5 被引用数 (Scopus)

Demonstration of n-MOSFET operation and internal charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC

Oka, R., Yamamoto, K., Wang, D., Nakashima, H., Hishiki, S. & Kawamura, K., 9月 2019, p. 777-778. 2 p.

研究成果: 会議への寄与タイプ › 学会誌 › 査読

Open Access

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Maekrua, T., Goto, T., Nakae, K., Yamamoto, K., Nakashima, H. & Wang, D., 2019, In: Japanese journal of applied physics. 58, SB, SBBE05.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

4 被引用数 (Scopus)

Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation

Yamamoto, K., Nakae, K., Wang, D., Nakashima, H., Xue, Z., Zhang, M. & Di, Z., 2019, In: Japanese journal of applied physics. 58, SB, SBBA14.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices

寄稿の翻訳タイトル: Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices Iseri, K., Wen, W.-C., Yamamoto, K., Wang, D. & Nakashima, H., 9月 2019, p. 639-640. 2 p.

研究成果: 会議への寄与タイプ › 学会誌 › 査読

Open Access

Microstructural studies of core/rim structure of polycarbosilane-derived SiC consolidated by spark plasma sintering

Lee, J. H., Lee, Y., Han, Y. H., Shin, D. G., Kim, S. & Jang, B. K., 6月 15 2019, In: Ceramics International. 45, 9, p. 12406-12410 5 p.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

2 被引用数 (Scopus)

Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass

Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H. & Toko, K., 5月 27 2019, In: Applied Physics Letters. 114, 21, 212107.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

Open Access

41 被引用数 (Scopus)

SiN used as a Stressor in Germanium-On-Insulator Substrate

Duangchan, S., Yamamoto, K., Wang, D., Nakashima, H. & Baba, A., 10月 2019, IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019. Institute of Electrical and Electronics Engineers Inc., 9058896. (IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

2018

Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator

寄稿の翻訳タイトル: Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-InsulatorYamamoto, K., Nakae, K., DONG, W., Nakashima, H., Xue, Z., Zhang, M. & Di, Z., 9月 2018, p. 847-848. 2 p.

研究成果: 会議への寄与タイプ › 学会誌 › 査読

Open Access

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