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Energy Engineering Sciences
総合理工学研究院
IFC部門
概要
フィンガープリント
ネットワーク
プロファイル
(1)
研究成果
(143)
活動
(4)
フィンガープリント
Energy Engineering Sciencesが活動している研究トピックを掘り下げます。これらのトピックラベルは、この組織のメンバーの研究成果に基づきます。これらがまとまってユニークなフィンガープリントを構成します。
並べ替え順
重み付け
アルファベット順
Material Science
Defect
97%
Al2O3
71%
Spark Plasma Sintering
59%
Temperature
56%
Surface
53%
Liquid Films
51%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Coating
49%
Annealing
47%
Membrane
45%
Electrical Property
44%
Oxide Semiconductor
40%
Deep-Level Transient Spectroscopy
38%
Thin-Film Transistor
38%
Density
37%
Field Effect Transistors
36%
Photoluminescence
36%
Heat Treatment
35%
Capacitor
34%
Oxide
34%
Characterization
33%
Hole Mobility
33%
Amorphous Material
33%
Metal Oxide
30%
Passivation
29%
Gettering
27%
Germanium
27%
Ceramics
27%
Microstructure
26%
Aluminum Oxide
25%
Sintering
23%
Devices
21%
Metal
20%
Strain
20%
Crystallization
18%
Crystalline Material
18%
Silicon Carbide
18%
Material
18%
Semiconductor Device
17%
Silicon Dioxide
16%
Magnesium Oxide
16%
Permittivity
15%
Shrinkage
15%
Void Fraction
14%
Solid
14%
Surface Passivation
13%
Etching
13%
X-Ray Diffraction
12%
Corrosion
12%
Luminescence
12%
Amorphous Metal
11%
Hardness
11%
Powder
11%
Semiconductor Structure
11%
Mechanical Property
10%
High Temperature Corrosion
10%
Dielectric Material
10%
Boron Nitride
9%
Gas
9%
Hole Concentration
9%
Metallization
9%
ZnO
9%
Heterojunction
9%
Vanadium
9%
Carbon Nanotubes
9%
Young's Modulus
9%
Indium
9%
Gallium
9%
Micro-Raman Spectroscopy
9%
Finite Element Modeling
9%
Yttrium
9%
Composite Material
9%
Yttria Stabilized Zirconia
9%
Electrical Resistivity
9%
Ultrathin Films
9%
Nanosheet
9%
Morphology
9%
Coarsening
8%
Single Crystal
8%
Fracture Toughness
8%
Electronics
8%
Crack
8%
Gas Turbine
7%
Irradiation
7%
Sputter Deposition
7%
Oxygen Vacancy
6%
Thermal Barrier Coatings
6%
Surface Reaction
6%
Mechanical Property
6%
Carrier Mobility
6%
Grain Boundary
6%
Particle
6%
Multilayers
6%
Optical Materials
6%
Materials Property
6%
Dielectric Films
6%
Plasma-Enhanced Chemical Vapor Deposition
6%
Microphotoluminescence
6%
Crystal
5%
Epitaxy
5%
Physics
Insulators
100%
Substrates
53%
Photoluminescence
51%
Metal
48%
Temperature
45%
Wafer
43%
Annealing
41%
Fractions
39%
Defects
38%
Photons
38%
Electrical Properties
32%
Mobility
30%
Field Effect Transistor
28%
Deposition
27%
Fabrication
26%
Transients
23%
Capacitance
21%
Schottky Barrier Height
21%
Condensation
19%
Region
18%
Capacitor
18%
Vapor
18%
Minority Carriers
17%
Performance
16%
Electron Cyclotron Resonance
15%
Oxide
15%
Evaluation
14%
Behavior
14%
Oxidation
14%
Ratios
12%
Diode
12%
Value
11%
Increasing
11%
Membrane
11%
Sodium
11%
Nitrogen
10%
Electroluminescence
10%
Growth
10%
Polycrystalline
10%
Quality
9%
Gases
9%
Laser
9%
Media
9%
Targets
9%
Strain
9%
Grain Size
9%
Germanium
9%
Atoms
9%
Model
9%
Hydroxylapatite
9%
Electrical Resistivity
9%
Achievement
9%
Electric Potential
9%
Dielectrics
8%
Valence
8%
Rubidium
7%
Transmission Electron Microscopy
7%
Existence
7%
Crystallization
7%
Accumulations
6%
Hysteresis
6%
Silicon Nitride
6%
X Ray Spectroscopy
6%
Axial Strain
6%
Sputtering
6%
Fluorescence
6%
Work Functions
6%
Solid Phase
6%
Retarding
5%
Validity
5%
Independent Variables
5%
Room Temperature
5%
Electrodes
5%
Kinetics
5%
Engineering
Metal Oxide Semiconductor
70%
Density
46%
Membrane
45%
Defects
44%
Annealing
38%
Substrates
37%
Thickness
29%
Interface State
28%
Evaluation
25%
Transients
23%
Capacitance
23%
Oxide Thickness
21%
Compressive Strain
20%
Interlayer
20%
Gate Stack
19%
Germanium
18%
Related Defect
18%
Minority Carrier
16%
Fabrication
15%
Characteristics
15%
Strain Relaxation
14%
Oxidation Reaction
12%
Gate Dielectric
12%
Type Metal
12%
Convergent Beam Electron Diffraction
12%
Ge Substrate
12%
Reduction
11%
Energy Gap
11%
Local Strain
10%
Dry Oxidation
10%
Annealing Temperature
9%
Fields
9%
Field-Effect Transistor
9%
Ohmic Contacts
9%
Glass Substrate
9%
Finite Element Modeling
9%
Lutetium
9%
Doping Level
9%
Photons
9%
Yttrium Oxide
9%
Atomic Layer Deposition
9%
Temperature
9%
Wafer Quality
8%
Metal-Oxide-Semiconductor Field-Effect Transistor
8%
Oxide Layer
8%
Ge Interface
7%
Measurement
7%
Capacitance Measurement
6%
Deep Level
6%
Forming
6%
Interface Trap
6%
Heat Treatment
6%
Sio2 Film
6%
Dielectric Film
6%
Silicon on Insulator
6%
Layer Thickness
6%
Thin-Film Transistor
6%
Electric Potential
6%
Bridges
5%
Laser Excitation
5%
Mechanisms
5%
Surfaces
5%
Tensile Strain
5%
Research
5%