Abstract
We have developed an instrument for in-situ X-ray topography during crystal growth of silicon carbide (SiC). A vertical X-ray goniometer is combined with a furnace for sublimation growth. A high-power X-ray source and a TV imaging system using a CCD camera make possible to display the behaviors of defects in SiC crystal inside crucible. For a demonstration of the developed instrument, we show the topographs of a SiC crystal at high temperature. The topographs show distinct deformations developing with increasing temperature.
| Original language | English |
|---|---|
| Pages (from-to) | I/- |
| Journal | Materials Science Forum |
| Volume | 338 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering