X-ray evaluation of high-verticality sidewalls fabricated by deep reactive ion etching

Kazuma Takeuchi, Yuichiro Ezoe, Kumi Ishikawa, Kasumi Nakamura, Masaki Numazawa, Masaru Terada, Maiko Fujitani, Daiki Ishi, Yusuke Noda, Takaya Ohashi, Kohei Morishita, Kazuo Nakajima, Kazuhisa Mitsuda

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5 Citations (Scopus)


We report the fabrication and characterization of high-verticality sidewalls by deep reactive ion etching (DRIE). We quantitatively evaluated the verticality of the sidewalls with a width of 20μm and a depth of 300μm by using an X-ray beam (1.49 keV). To the best of our knowledge, we succeeded in constraining the verticality and smoothness of the DRIE-fabricated sidewalls with the highest accuracy. The verticality of the sidewalls against the wafer surface was estimated from the shifts of the X-ray focus to be 8.7 + 3.2 arcmin on average within the wafer, while the resolution of the X-ray focus was 21.1 + 2.7 arcmin in half-power diameter. Although the verticality and resolution require further improvements, we verified that the X-ray imaging technique is valid for quantifying the sidewall properties.

Original languageEnglish
Article number06GN04
JournalJapanese journal of applied physics
Issue number6
Publication statusPublished - Jun 2017
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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