Visualization of conductive filament of ReRAM during resistive switching by in-situ TEM

Yasuo Takahashi, Masaki Kudo, Masashi Arita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)


Performance of in-situ-transmission electron microscopy (TEM) applied to analysis of the resistive random access memory (ReRAM) is reported. Recent progress of ReRAMs makes it indispensable to understand the resistive switching mechanism in order to guarantee the reliability of ReRAMs. Since the TEM provides a high resolution images of the nanostructure, in-situ TEM should be a powerful tool for the analysis if electrical characteristics of ReRAMs can be measured in the TEM. The two sample fabrication methods are applied to two different ReRAM devices. Switching characteristics, which are almost the same as those measured at the outside of TEM by the use of conventional ReRAM cells, are achieved together with clear images of formation and rupture of conductive filaments corresponding to the low and high resistance states. In addition, retention characteristics longer than 106 s, and SET/RESET pulse operation more than 100k times are confirmed during TEM observation. These results indicate that the in-situ TEM will be a powerful tool to analyze the reliability of ReRAMs.

Original languageEnglish
Title of host publicationULSI Process Integration 9
EditorsC. Claeys, J. Murota, M. Tao, H. Iwai, S. Deleonibus
PublisherElectrochemical Society Inc.
Number of pages11
ISBN (Electronic)9781607685395
Publication statusPublished - 2015
Externally publishedYes
EventSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


OtherSymposium on ULSI Process Integration 9 - 228th ECS Meeting
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • General Engineering


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