Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

K. Takeuchi; M. Fukui; T. Saraya; K. Itou; T. Takakura; S. Suzuki; Y. Numasawa; K. Kakushima; T. Hoshii; K. Furukawa; M. Watanabe; N. Shigyo; H. Wakabayashi; M. Tsukuda; A. Ogura; K. Tsutsui; H. Iwai; S. Nishizawa; I. Omura; H. Ohashi; T. Hiramoto

doi:10.1109/ICMTS.2019.8730922

Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, H. OhashiT. Hiramoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Vertical PNP bipolar transistor test structures were fabricated, which can be integrated on the same wafer with functional IGBTs. Common-base current gain was measured by applying zero voltage to the leaky back side junction, from which minority carrier lifetime in the base region was extracted. The structure makes it possible to measure the lifetime after a real IGBT fabrication process flow, and to correlate it with the characteristics of IGBTs on the same wafer.

Original language	English
Title of host publication	2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	98-101
Number of pages	4
ISBN (Electronic)	9781728114668
DOIs	https://doi.org/10.1109/ICMTS.2019.8730922
Publication status	Published - Mar 2019
Event	32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Fukuoka Prefecture, Japan Duration: Mar 18 2019 → Mar 21 2019

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Volume	2019-March

Conference

Conference	32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
Country/Territory	Japan
City	Kitakyushu City, Fukuoka Prefecture
Period	3/18/19 → 3/21/19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ICMTS.2019.8730922

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Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsukuda, M., Ogura, A., Tsutsui, K., Iwai, H., Nishizawa, S., Omura, I., ... Hiramoto, T. (2019). Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019 (pp. 98-101). Article 8730922 (IEEE International Conference on Microelectronic Test Structures; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2019.8730922

Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs. / Takeuchi, K.; Fukui, M.; Saraya, T. et al.
2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 98-101 8730922 (IEEE International Conference on Microelectronic Test Structures; Vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takeuchi, K, Fukui, M, Saraya, T, Itou, K, Takakura, T, Suzuki, S, Numasawa, Y, Kakushima, K, Hoshii, T, Furukawa, K, Watanabe, M, Shigyo, N, Wakabayashi, H, Tsukuda, M, Ogura, A, Tsutsui, K, Iwai, H, Nishizawa, S, Omura, I, Ohashi, H & Hiramoto, T 2019, Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs. in 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019., 8730922, IEEE International Conference on Microelectronic Test Structures, vol. 2019-March, Institute of Electrical and Electronics Engineers Inc., pp. 98-101, 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, Kitakyushu City, Fukuoka Prefecture, Japan, 3/18/19. https://doi.org/10.1109/ICMTS.2019.8730922

Takeuchi K, Fukui M, Saraya T, Itou K, Takakura T, Suzuki S et al. Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 98-101. 8730922. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2019.8730922

@inproceedings{b2ae1697930a4cbd815360884f5d61d5,

title = "Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs",

abstract = "Vertical PNP bipolar transistor test structures were fabricated, which can be integrated on the same wafer with functional IGBTs. Common-base current gain was measured by applying zero voltage to the leaky back side junction, from which minority carrier lifetime in the base region was extracted. The structure makes it possible to measure the lifetime after a real IGBT fabrication process flow, and to correlate it with the characteristics of IGBTs on the same wafer.",

author = "K. Takeuchi and M. Fukui and T. Saraya and K. Itou and T. Takakura and S. Suzuki and Y. Numasawa and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and H. Wakabayashi and M. Tsukuda and A. Ogura and K. Tsutsui and H. Iwai and S. Nishizawa and I. Omura and H. Ohashi and T. Hiramoto",

note = "Funding Information: This work was supported by the New Energy and Industrial Technology Development Organization (NEDO). Publisher Copyright: {\textcopyright} 2019 IEEE.; 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 ; Conference date: 18-03-2019 Through 21-03-2019",

year = "2019",

month = mar,

doi = "10.1109/ICMTS.2019.8730922",

language = "English",

series = "IEEE International Conference on Microelectronic Test Structures",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "98--101",

booktitle = "2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019",

address = "United States",

}

TY - GEN

T1 - Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

AU - Takeuchi, K.

AU - Fukui, M.

AU - Saraya, T.

AU - Itou, K.

AU - Takakura, T.

AU - Suzuki, S.

AU - Numasawa, Y.

AU - Kakushima, K.

AU - Hoshii, T.

AU - Furukawa, K.

AU - Watanabe, M.

AU - Shigyo, N.

AU - Wakabayashi, H.

AU - Tsukuda, M.

AU - Ogura, A.

AU - Tsutsui, K.

AU - Iwai, H.

AU - Nishizawa, S.

AU - Omura, I.

AU - Ohashi, H.

AU - Hiramoto, T.

PY - 2019/3

Y1 - 2019/3

N2 - Vertical PNP bipolar transistor test structures were fabricated, which can be integrated on the same wafer with functional IGBTs. Common-base current gain was measured by applying zero voltage to the leaky back side junction, from which minority carrier lifetime in the base region was extracted. The structure makes it possible to measure the lifetime after a real IGBT fabrication process flow, and to correlate it with the characteristics of IGBTs on the same wafer.

AB - Vertical PNP bipolar transistor test structures were fabricated, which can be integrated on the same wafer with functional IGBTs. Common-base current gain was measured by applying zero voltage to the leaky back side junction, from which minority carrier lifetime in the base region was extracted. The structure makes it possible to measure the lifetime after a real IGBT fabrication process flow, and to correlate it with the characteristics of IGBTs on the same wafer.

UR - http://www.scopus.com/inward/record.url?scp=85067863567&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85067863567&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2019.8730922

DO - 10.1109/ICMTS.2019.8730922

M3 - Conference contribution

AN - SCOPUS:85067863567

T3 - IEEE International Conference on Microelectronic Test Structures

SP - 98

EP - 101

BT - 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019

Y2 - 18 March 2019 through 21 March 2019

ER -

Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

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