Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately

T. Hoshii; K. Furukawa; K. Kakushima; M. Watanabe; N. Shigvo; T. Saraya; T. Takakura; K. Ltou; M. Fukui; S. Suzuki; K. Takeuchi; I. Muneta; H. Wakabayashi; S. Nishizawa; K. Tsutsui; T. Hiramoto; H. Ohashi; H. Lwai

doi:10.1109/ESSDERC.2018.8486870

Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately

T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

The injection enhancement effect in IGBTs was experimentally verified by separately measuring emitter electron-and hole-currents for the first time. Finger contacts were employed as ladder-like periodic n+ and p+ emitters to allow the independent measurement of these currents. Both reducing the mesa width and increasing the cell pitch were found to increase electron injection from the emitter, demonstrating the injection enhancement effect. These experimental results agreed well with the simulation results.

Original language	English
Title of host publication	2018 48th European Solid-State Device Research Conference, ESSDERC 2018
Publisher	Editions Frontieres
Pages	26-29
Number of pages	4
ISBN (Electronic)	9781538654019
DOIs	https://doi.org/10.1109/ESSDERC.2018.8486870
Publication status	Published - Oct 8 2018
Event	48th European Solid-State Device Research Conference, ESSDERC 2018 - Dresden, Germany Duration: Sept 3 2018 → Sept 6 2018

Publication series

Name	European Solid-State Device Research Conference
Volume	2018-September
ISSN (Print)	1930-8876

Other

Other	48th European Solid-State Device Research Conference, ESSDERC 2018
Country/Territory	Germany
City	Dresden
Period	9/3/18 → 9/6/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ESSDERC.2018.8486870

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Hoshii, T., Furukawa, K., Kakushima, K., Watanabe, M., Shigvo, N., Saraya, T., Takakura, T., Ltou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., & Lwai, H. (2018). Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. In 2018 48th European Solid-State Device Research Conference, ESSDERC 2018 (pp. 26-29). Article 8486870 (European Solid-State Device Research Conference; Vol. 2018-September). Editions Frontieres. https://doi.org/10.1109/ESSDERC.2018.8486870

Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. / Hoshii, T.; Furukawa, K.; Kakushima, K. et al.
2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres, 2018. p. 26-29 8486870 (European Solid-State Device Research Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hoshii, T, Furukawa, K, Kakushima, K, Watanabe, M, Shigvo, N, Saraya, T, Takakura, T, Ltou, K, Fukui, M, Suzuki, S, Takeuchi, K, Muneta, I, Wakabayashi, H, Nishizawa, S, Tsutsui, K, Hiramoto, T, Ohashi, H & Lwai, H 2018, Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. in 2018 48th European Solid-State Device Research Conference, ESSDERC 2018., 8486870, European Solid-State Device Research Conference, vol. 2018-September, Editions Frontieres, pp. 26-29, 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, 9/3/18. https://doi.org/10.1109/ESSDERC.2018.8486870

Hoshii T, Furukawa K, Kakushima K, Watanabe M, Shigvo N, Saraya T et al. Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. In 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres. 2018. p. 26-29. 8486870. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2018.8486870

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abstract = "The injection enhancement effect in IGBTs was experimentally verified by separately measuring emitter electron-and hole-currents for the first time. Finger contacts were employed as ladder-like periodic n+ and p+ emitters to allow the independent measurement of these currents. Both reducing the mesa width and increasing the cell pitch were found to increase electron injection from the emitter, demonstrating the injection enhancement effect. These experimental results agreed well with the simulation results.",

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AU - Takakura, T.

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AB - The injection enhancement effect in IGBTs was experimentally verified by separately measuring emitter electron-and hole-currents for the first time. Finger contacts were employed as ladder-like periodic n+ and p+ emitters to allow the independent measurement of these currents. Both reducing the mesa width and increasing the cell pitch were found to increase electron injection from the emitter, demonstrating the injection enhancement effect. These experimental results agreed well with the simulation results.

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Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately

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