Vanadium-related deep levels in n-silicon detected by junction capacitance waveform analysis

Hisatsugu Kawahara; Yoichi Okamoto; Kenichiro Tahira; Jun Morimoto; Toru Miyakawa; Hiroshi Nakashima

doi:10.1143/JJAP.31.87

Vanadium-related deep levels in n-silicon detected by junction capacitance waveform analysis

Hisatsugu Kawahara, Yoichi Okamoto, Kenichiro Tahira, Jun Morimoto, Toru Miyakawa, Hiroshi Nakashima

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (ΔE = 0.08eV, σ = 3.2 × 10^–18 cm²), VB (ΔE = 0.28eV, σ = 2.6 × 10^–14 cm²) and VC (ΔE = 0.24eV, σ = 8.4 × 10^–18 cm²). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.

Original language	English
Pages (from-to)	87-88
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	31
Issue number	1 R
DOIs	https://doi.org/10.1143/JJAP.31.87
Publication status	Published - Jan 1992

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Vanadium-related deep levels in n-silicon detected by junction capacitance waveform analysis",

abstract = "Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (ΔE = 0.08eV, σ = 3.2 × 10–18 cm2), VB (ΔE = 0.28eV, σ = 2.6 × 10–14 cm2) and VC (ΔE = 0.24eV, σ = 8.4 × 10–18 cm2). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.",

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T1 - Vanadium-related deep levels in n-silicon detected by junction capacitance waveform analysis

AU - Kawahara, Hisatsugu

AU - Okamoto, Yoichi

AU - Tahira, Kenichiro

AU - Morimoto, Jun

AU - Miyakawa, Toru

AU - Nakashima, Hiroshi

PY - 1992/1

Y1 - 1992/1

N2 - Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (ΔE = 0.08eV, σ = 3.2 × 10–18 cm2), VB (ΔE = 0.28eV, σ = 2.6 × 10–14 cm2) and VC (ΔE = 0.24eV, σ = 8.4 × 10–18 cm2). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.

AB - Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (ΔE = 0.08eV, σ = 3.2 × 10–18 cm2), VB (ΔE = 0.28eV, σ = 2.6 × 10–14 cm2) and VC (ΔE = 0.24eV, σ = 8.4 × 10–18 cm2). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.

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Vanadium-related deep levels in n-silicon detected by junction capacitance waveform analysis

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