Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

Toshinori Matsushima, Atula S.D. Sandanayaka, Yu Esaki, Chihaya Adachi

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10-2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

Original languageEnglish
Article number14547
JournalScientific reports
Publication statusPublished - Sept 29 2015

All Science Journal Classification (ASJC) codes

  • General


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